No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
Fast Recovery Diode |
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IXYS Corporation |
Three phase full Bridge • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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IXYS |
Fast Recovery Diode |
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|
|
IXYS Corporation |
Three phase full bridge • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB |
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IXYS |
Standard Rectifier / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-H |
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IXYS |
Standard Rectifier / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-H |
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