logo

IXYS M11 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
M1102NC500

IXYS
Fast Recovery Diode
Datasheet
2
M1102NC520

IXYS
Fast Recovery Diode
Datasheet
3
M1104NC400

IXYS
Fast Recovery Diode
Datasheet
4
M1104NC440

IXYS
Fast Recovery Diode
Datasheet
5
M1104NC420

IXYS
Fast Recovery Diode
Datasheet
6
M1102NC540

IXYS
Fast Recovery Diode
Datasheet
7
M1102NC560

IXYS
Fast Recovery Diode
Datasheet
8
M1102NC580

IXYS
Fast Recovery Diode
Datasheet
9
M1102NC600

IXYS
Fast Recovery Diode
Datasheet
10
M1163NC450

IXYS
Fast Recovery Diode
Datasheet
11
M1104NC450

IXYS
Fast Recovery Diode
Datasheet
12
SM111K04L

IXYS
High Efficiency SolarMD

• Monocrystalline silicon technology
• High efficiency outdoor and indoor
• Long life and stable output
• Sealed Package
• High mechanical robustness Applications
• Battery chargers for portables such as cell phones, PDAs, GPS-Systems, …
• “Green” el
Datasheet
13
M1163NC420

IXYS
Fast Recovery Diode
Datasheet
14
M1163NC440

IXYS
Fast Recovery Diode
Datasheet
15
M1163NC400

IXYS
Fast Recovery Diode
Datasheet
16
IXFM11N80

IXYS Corporation
Power MOSFET

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Symbol VDSS VGS(
Datasheet
17
SM111K09L

IXYS
High Efficiency SolarMD

• Monocrystalline silicon technology
• High efficiency outdoor and indoor
• Long life and stable output
• Sealed Package
• High mechanical robustness Applications
• Battery chargers for portables such as cell phones, PDAs, GPS-Systems, …
• “Green” el
Datasheet
18
IXTM11N80

IXYS
Power MOSFET
q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact