| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
Medium Voltage Thyristor |
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IXYS Corporation |
HIGH VOLTAGE IGBT WITH DIODE Hole-less TO-247 package for clip mounting High frequency IGBT and anti-parallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recov |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS |
Medium Voltage Thyristor |
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IXYS Corporation |
HiPerFAST IGBT C = Collector, TAB = Collector Md Weight Mounting torque (M3) (IXGK) 1.13/10Nm/lb.in. TO-264 AA PLUS247TM 10 6 g g International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicit |
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IXYS Corporation |
HiPerFAST IGBT C = Collector, TAB = Collector Md Weight Mounting torque (M3) (IXGK) 1.13/10Nm/lb.in. TO-264 AA PLUS247TM 10 6 g g International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicit |
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IXYS Corporation |
High Voltage IGBT • International standard package JEDEC TO-264 AA • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recover |
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IXYS |
IGBT ● International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES |
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IXYS |
IGBT ● International standard packages JEDEC TO-264 and PLUS247TM ● Low switching losses, low V(sat) ● MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES |
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