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IXYS |
High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS |
(CS6xx) Thyristors |
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IXYS Corporation |
IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS |
IXRH50N60 q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat |
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IXYS |
Power MOSFET International Standard Packages LAovwalaRnDcSh(OeN) RanadteQd G Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC |
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IXYS Corporation |
IXSH15N120A •2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications nd Max. Lead Temperature for Soldering (1.6mm from case for 1 |
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IXYS |
Soft Recovery Diode |
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IXYS |
Single Phase Rectifier Bridge • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
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IXYS |
Fast Recovery Epitaxial Diode q International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high freq |
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IXYS |
4V Output Solar Cell • 4V Output • Triggers with Natural Sunlight • Provides True Wireless Power • No EMI/RFI Generation • Wave Solderable • Replacement of Discrete Components • Solid State Reliability • Small 8-Pin Surface Mount SOIC Applications • Portable Electronics |
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IXYS |
Optically Isolated I2C Bus Repeater • Bidirectionally Buffers I2C SDA Signal • Extends and Isolates I2C Interfaces • Standard-mode and Fast-mode I2C Side B Fast-mode Compatible VDDB > 4.5V • Operates on 2.7V to 5.5V • Voltage Level Translation • Slew-Limited Drivers Reduce EMI • Powerd |
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IXYS |
Standard Power MOSFET l Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie |
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IXYS |
Power MOSFET • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - low |
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IXYS Corporation |
IGBT Modules - Short Circuit SOA Capability Square RBSOA NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f |
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IXYS Corporation |
HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching ( |
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IXYS |
Fast Recovery Diode |
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IXYS |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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