No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
IGBT Optimized for 20-60kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Package Advantages High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications UPS Mo |
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IXYS |
650V IGBTs z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specif |
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IXYS |
IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver |
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IXYS |
IGBT z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver |
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IXYS |
IGBT International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inver |
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IXYS |
600V IGBTs Optimized for 5-30kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Packages Advantages High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Easy to Parallel Appl |
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IXYS |
600V IGBTs Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages High Power Density 175°C Rated Extremely Rugged Low Gate Drive Re |
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IXYS |
600V IGBT z International Standard Packages z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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IXYS |
650V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Packages z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unles |
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IXYS |
Diode z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requi |
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IXYS |
650V IGBT Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Moto |
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IXYS |
650V IGBT Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Moto |
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IXYS |
600V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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IXYS |
600V IGBT z Optimized for 10-30kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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IXYS |
600V IGBT z Optimized for 20-60kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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IXYS |
600V IGBT z Optimized for 20-60kHz Switching z Square RBSOA z International Standard Packages z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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IXYS |
Diode z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver |
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IXYS |
600V IGBT International Standard Packages Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inve |
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IXYS |
600V IGBT International Standard Packages Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inve |
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IXYS |
600V IGBT z International Standard Packages z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inve |
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