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IXYS |
XPT IGBT / Advantages: ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBS |
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IXYS Corporation |
Half-Bridge Driver • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers • Separate Logic pow |
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IXYS |
500mA 3-Phase Bridge Driver • Fully operational to +650V • • • • • Tolerant of negative transient voltages dV/dt immune (50V/ns) Latch-up protected over entire operating range Fault-current shutdown for all drive outputs User selectable delay or latching function for clearing o |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ● Sonic™ diode - fast reverse recovery - low operating forw |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI • Thin wafer technology |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EM |
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IXYS |
XPT IGBT • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin waf |
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IXYS |
Power MOSFET ’s permissible temperature range within which the device may be operated continuously. The maximum junction temperature ( TJM ) is 150oC unless otherwise specified (in some cases 175oC). Junction temperature varies electrical parameters of Power MOSF |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x |
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