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Anode Shorted Gate Turn-Off Thyristor |
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IGBT Gate Driver • High reliability topology • Separate gate interface card for optimal packaging • Designed for ultra low power consumption • Balanced supply current in ON and OFF mode • Build in DC/DC-converter with soft start • Integrated input filter for low EMI |
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Anode Shorted Gate Turn-Off Thyristor Storage temperature range Notes:1) VGK=-2Volts. 2) Tj=125°C, VD=1250V, VDM 2500V diGQ/dt=40A/µs, ITGQ=4000A and CS=6µF. 3) Double-side cooled, single phase; 50Hz, 180° half-sinewave. 4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied vo |
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High Performance Fast Recovery Diode / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery f |
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High Performance Fast Recovery Diode / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery f |
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Sonic Fast Recovery Diode / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery f |
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