| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS Corporation |
HiPerFRED Epitaxial Diode dual diode • HiPerFREDTM diode chips - fast reverse recovery - low operating forward voltage - low leakage current - avalanche capability • Industry Standard package - with isolated DCB ceramic base plate - UL registered E72873 Applications • Topologies - dual |
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IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t |
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IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t |
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IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 280 3000 3600 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/l |
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IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t |
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|
IXYS Corporation |
Fast Recovery Epitaxial Diode (FRED) Module International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t |
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