| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS Corporation |
IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS Corporation |
IXSH15N120A •2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications nd Max. Lead Temperature for Soldering (1.6mm from case for 1 |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie |
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IXYS Corporation |
High Power Diode Modules International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 q q q q q I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power e |
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IXYS Corporation |
IGBT Modules - Short Circuit SOA Capability Square RBSOA NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f |
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IXYS Corporation |
HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching ( |
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IXYS Corporation |
ECO-PAC Single Phase Rectifier Bridge WITH FAST RECOVERY EPITAXIAL DIODES (FRED) • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers |
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IXYS Corporation |
Standard Power MOSFET • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 1 |
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IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
IGBT Modules Short Circuit SOA Capability Square RBSOA NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast f |
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IXYS Corporation |
IGBT Module IGBTs T1-T2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C non repetitive TC = 25°C Conditions |
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IXYS Corporation |
Bus Compatible Digital PWM Controller/ IXDP 610 G G Microcomputer bus compatible Two complementary outputs for direct control of a switching power bridge Dynamically programmable pulse width ranges from 0 to 100 % Two modes of operation: 7-bit or 8bit resolution Switching frequency range up to 39 |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
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IXYS Corporation |
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) • International standard package miniBLOC • Isolation voltage 2500 V~ • single Phase Rectifier Bridge with FREDs • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour Applicat |
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IXYS Corporation |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE |
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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS Corporation |
Thyristor Modules Thyristor/Diode Modules 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 A/µs V/µs W W W V °C °C °C V~ V~ • International standard package, JEDEC TO-240 AA • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated |
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IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT V V V V A A A A G E G DS TO-247 (IXGH) TO-268 (IXGT) DataShee C (TAB) DataSheet4U.com -55 ... +150 150 -55 ... +150 300 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md We |
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