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IXYS Corporation FDM DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FDM21-05QC

IXYS Corporation
Q-Class Power MOSFETs

• Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness
• HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour fo
Datasheet
2
FDM100-0045SP

IXYS Corporation
Buck Chopper

• trench MOSFET - very low on state resistance RDSon - fast switching
• Schottky diode - low forward voltage drop - fast switching
• ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepag
Datasheet



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