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IXYS Corporation |
Fast Recovery Epitaxial Diode E72873 ● International standard package miniBLOC (ISOTOP compatible) ● Isolation voltage 2500 V~ ● 2 independent FRED in 1 package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recover |
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IXYS Corporation |
Fast Recovery Epitaxial Diode / Advantages: • Planar passivated chips • Low leakage current • Very short recovery time • Improved thermal behaviour • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • High reliability circuit operation • Low voltage peaks |
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IXYS Corporation |
Epitaxial Diode ● ● ● ● ● ● ● ● ● International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery b |
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IXYS Corporation |
Common Cathode Fast Recovery Epitaxial Diode (FRED) q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely l |
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IXYS Corporation |
Epitaxial Diode • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching d |
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IXYS Corporation |
Fast Recovery Epitaxial Diode • 2 independent FRED in 1 package • Isolation voltage 3000 V~ • Planar passivated chips • Leads suitable for PC board soldering • Very short recovery time • Soft recovery behaviour Applications • Antiparallel diode for high frequency switching device |
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IXYS Corporation |
HiPer FREDTM Epitaxial Diode with common cathode and soft recovery q q q q q q q q TC = 25°C mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab typical 165 0.8...1.2 10...50 2500 6 International standard package Planar passivated chips Very short recovery time Extremely low switchi |
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IXYS Corporation |
Fast Recovery Epitaxial Diode • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour A A A A °C °C °C W V~ V~ Nm lb.in. g Symbol IFRMS IFAVM ① IFRM IFSM |
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IXYS Corporation |
HiPerFRED Epitaxial Diode with soft recovery A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 |
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IXYS Corporation |
Fast Recovery Epitaxial Diode ● ● ● ● ● ● ● International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TO-263 AA Outline I2t TVJ = 45° |
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IXYS Corporation |
Fast Recovery Epitaxial Diode / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for lo |
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IXYS Corporation |
Fast Recovery Epitaxial Diode • 2 independent FRED in 1 package • Isolation voltage 3000 V~ • Planar passivated chips • Leads suitable for PC board soldering • Very short recovery time • Soft recovery behaviour Applications • Antiparallel diode for high frequency switching device |
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IXYS Corporation |
Fast Recovery Epitaxial Diode • 2 independent FRED in 1 package • Isolation voltage 3000 V~ • Planar passivated chips • Leads suitable for PC board soldering • Very short recovery time • Soft recovery behaviour Applications • Antiparallel diode for high frequency switching device |
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IXYS Corporation |
Fast Recovery Epitaxial Diode / Advantages: • Planar passivated chips • Low leakage current • Very short recovery time • Improved thermal behaviour • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • High reliability circuit operation • Low voltage peaks |
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IXYS Corporation |
Fast Recovery Epitaxial Diode / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for lo |
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IXYS Corporation |
Epitaxial Diode q q q q q q q q TC = 25°C mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab typical 165 0.8...1.2 10...50 2500 6 International standard package Planar passivated chips Very short recovery time Extremely low switchi |
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IXYS Corporation |
Epitaxial Diode 250 0.2 0.1 -55...+175 175 -55...+150 A mJ A °C °C °C W Nm g q q q q q IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values So |
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IXYS Corporation |
Fast Recovery Epitaxial Diode q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine It 2 q q q q q TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight T |
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IXYS Corporation |
Fast Recovery Epitaxial Diode q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine It 2 q q q q q TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight T |
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IXYS Corporation |
Common Cathode Fast Recovery Epitaxial Diode q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely l |
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