No. | Partie # | Fabricant | Description | Fiche Technique |
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ISAHAYA |
SMALL-SIGNAL TRANSISTOR ●Super-thin flat lead type package. t=0.45mm ●High gain bandwidth product. fT=8.0GHz ●High gain, low noise. ●Can operate at low voltage. 0.45 1.2 0.8 0.4 0.4 〈SMALL-SIGNAL TRANSISTOR〉 2SC5883 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPIT |
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Isahaya Electronics Corporation |
2SC5804 ① ② ③ APPLICATION For hybrid IC,small type machine low frequency voltage amplify application. 0.5 MAXIMUM RATINGS(Ta=25℃) Symbol VCBO VCEO VEBO I O Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector |
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Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR ● Super-thin flat lead type package. t=0.45mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage VCE(sat)=0.3V max (@Ic=100mA/IB=10mA) ① ② ③ APPLICATION For hybrid IC,small type machine low frequency volt |
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Isahaya Electronics Corporation |
Silicon NPN Transistor der any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any produc |
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Isahaya Electronics Corporation |
Transistor www.DataSheet4U.com ● Super-thin flat lead type package. t=0.45mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage VCE(sat)=0.3V max (@Ic=100mA/IB=10mA) 0.4 ② ③ For hybrid IC,small type machine low fr |
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ISAHAYA |
SMALL-SIGNAL TRANSISTOR ●Super-thin flat lead type package. t=0.45mm ●High gain bandwidth product. fT=8.0GHz ●High gain, low noise. ●Can operate at low voltage. 0.45 1.2 0.8 0.4 0.4 〈SMALL-SIGNAL TRANSISTOR〉 2SC5883 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPIT |
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