| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
IRG4PH50KD • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance wi |
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IRF |
INSULATED GATE BIPOLAR TRANSISTOR • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT |
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