डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFBC40A | Power MOSFET PD -91885A
SMPS MOSFET
IRFBC40A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Sim |
International Rectifier |
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IRFBC40A | Power MOSFET www.vishay.com
IRFBC40A
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
1.2
42
10 |
Vishay |
|
IRFBC40A | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC40A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
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IRFBC40APBF | HEXFET Power MOSFET SMPS MOSFET
PD - 94986
IRFBC40APbF
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg |
International Rectifier |
|
IRFBC40AS | Power MOSFET PD- 91897A
SMPS MOSFET
IRFBC40AS
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
l
VDSS
600V
Rds(on) max
1.2 Ω
ID
6.2A
B |
International Rectifier |
|
IRFBC40AS | Power MOSFET IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
600 VGS = 10 V
42
Qgs (nC)
10
Qgd (nC)
20
Configuration
Single
D
D2PAK (TO-263)
1.2
G
GD S
|
Vishay |
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IRFBC40AS | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC40AS
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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