| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
SMPS MOSFET Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 |
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International Rectifier |
Power MOSFET rface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – Max. 1.73 – – – 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application n |
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International Rectifier |
Power MOSFET rface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – Max. 1.73 – – – 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application n |
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International Rectifier |
HEXFET Power MOSFET 65 40 Units °C/W f – – – – – – Notes through are on page 11 www.irf.com 1 03/11/04 IRF3704ZCS/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw |
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International Rectifier |
HEXFET Power MOSFET Junction-to-Case f y y i Typ. Max. 2.65 – – – 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient fià f – – – 0.50 – – – – – – Junction-to-Ambient (PCB Mount) gi Notes through are on page 12 www.irf.com 1 3/1/04 IRF37 |
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International Rectifier |
SMPS MOSFET Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 |
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International Rectifier |
Power MOSFET rface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – Max. 1.73 – – – 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application n |
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International Rectifier |
HEXFET Power MOSFET 65 40 Units °C/W f – – – – – – Notes through are on page 11 www.irf.com 1 03/11/04 IRF3704ZCS/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw |
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International Rectifier |
HEXFET Power MOSFET Junction-to-Case f y y i Typ. Max. 2.65 – – – 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient fià f – – – 0.50 – – – – – – Junction-to-Ambient (PCB Mount) gi Notes through are on page 12 www.irf.com 1 3/1/04 IRF37 |
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International Rectifier |
Power MOSFET – – – – – Notes through are on page 11 www.irf.com 1 9/15/03 IRF3704ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf |
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International Rectifier |
Power MOSFET – – – – – Notes through are on page 11 www.irf.com 1 9/15/03 IRF3704ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf |
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International Rectifier |
Power MOSFET t) Notes through are on page 12 www.irf.com Max. 20 ± 20 67 h 47 h 260 57 28 0.38 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. – – – 0.50 – – – – – – Max. 2.65 – – – 62 40 Units V A W W/°C °C Units °C/W 1 6/29/04 IRF3704Z/S/LPbF |
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International Rectifier |
Power MOSFET t) Notes through are on page 12 www.irf.com Max. 20 ± 20 67 h 47 h 260 57 28 0.38 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. – – – 0.50 – – – – – – Max. 2.65 – – – 62 40 Units V A W W/°C °C Units °C/W 1 6/29/04 IRF3704Z/S/LPbF |
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INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconducto |
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International Rectifier |
HEXFET Power MOSFET Junction-to-Case f y y i Typ. Max. 2.65 – – – 62 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient fià f – – – 0.50 – – – – – – Junction-to-Ambient (PCB Mount) gi Notes through are on page 12 www.irf.com 1 3/1/04 IRF37 |
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International Rectifier |
SMPS MOSFET Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)* Typ. – – – 0.50 – – – – – – * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤7.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety |
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International Rectifier |
Power MOSFET t) Notes through are on page 12 www.irf.com Max. 20 ± 20 67 h 47 h 260 57 28 0.38 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. – – – 0.50 – – – – – – Max. 2.65 – – – 62 40 Units V A W W/°C °C Units °C/W 1 6/29/04 IRF3704Z/S/LPbF |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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