No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power |
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INCHANGE |
N-Channel MOSFET ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on resistance, low gate charge ·Excellent avalanche characteristics. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APP |
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INCHANGE |
Ultrafast Recovery Rectifier ·Ultrafast recovery time ·Low forward voltage ·Low loss and soft recovery ·Single diode ·High temperature glass passivated junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC/DC power supplie |
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INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power |
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INCHANGE |
Modules Standard Diode ·High surge current capability ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PV combiner box ·Battery charges ·Converters ·Power supplies ABSOLUTE MAXIMUM RATINGS SYMBOL |
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INCHANGE |
Thyristor VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 1 15 mA 1.4 V 100 mA 1.5 V 0.27 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors VS-70TPS16 NOTICE: ISC r |
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INCHANGE |
Thyristor/Diode ·High voltage ·Low gate current ·Low thermal resistance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·power supplies ·Lighting circuits ·Temperature and motor speed control circuits ELECTRICAL CHA |
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INCHANGE |
Ultrafast Rectifier ·Ultrafast with soft recovery ·Low forward voltage drop ·175℃ operating junction temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·Higher f |
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