| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
NPN Transistor =0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Emitter Cutoff C |
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INCHANGE |
NPN Transistor llector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V; IC= 0 VCE= 1500V;VBE= 0 IC= 1A; VCE= 5 |
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INCHANGE |
NPN Transistor r-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V; IC= 0 VCE= 800V;VBE= 0 IC= 0.5A; VCE= 5V |
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