| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
Thyristors M= 16A IGT Gate-trigger current VD = 6 V VGT Gate-trigger voltage VD = 6 V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.5 mA 10 mA 0.5 mA 10 mA 1.25 V 45 mA 2 V 1.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is regis |
|
|
|
|
INCHANGE |
Thyristors STICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ 0.5 mA 10 mA 0.5 mA 10 mA VTM On-st |
|
|
|
|
INCHANGE |
Thyristor igger current VD = 6 V; IT = 0.1 A VGT Gate-trigger voltage VD = 6 V; IT = 0.1 A Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 500 μA 10 mA 500 μA 10 mA 1.4 V 60 mA 2.0 V 1.3 ℃/W isc website：www.iscsemi.com isc & iscsemi is regist |
|
|
|
|
INCHANGE |
Thyristor ,RGK= 220Ω, Tj=25℃ Tj=125℃ Tj=25℃ IDRM Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω Tj=125℃ VTM On-state voltage ITM= 40A IGT Gate-trigger current VD = 12 V; IT = 0.1 A VGT Gate-trigger voltage VD = 12 V; IT = 0.1 A Rth(j-c) Therm |
|
|
|
|
INCHANGE |
Thyristor 2 μA mA VTM On-state voltage ITM= 24A 1.6 V IGT Gate-trigger current VD = 12 V; RL=140Ω 200 μA VGT Gate-trigger voltage VD = 12 V; RL=140Ω 0.8 V Rth(j-c) Thermal resistance Junction to case 1.3 ℃/W NOTICE： ISC reserves the rights to |
|