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Triac ·With TO-220AB insulated package. ·Be suitable for general purpose AC switching which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in lig |
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NPN Transistor therwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A MIN TYP. MAX UNIT |
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Thyristor =VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=25℃; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=17A Ⅰ VD =12V;IT=100mA Ⅱ Ⅲ VD =12V;IT=100mA Half cy |
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Thyristor VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=17A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Half cycle MIN MAX UNIT 0.005 1.0 mA 1.55 V 35 35 mA 35 1.3 V 1.4 ℃/W isc website：www.iscsemi.com isc & iscsemi is registere |
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NPN Transistor S V(BR)EBO Emitter-Base Breakdown Voltage IE=10uA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=10uA ,IE=0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter |
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N-Channel MOSFET ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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Thyristor RAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ VTM On-state voltage ITM= 17A；tp=380μs Gate-trigger current （ minimum IGT IGT is gu |
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Triac ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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Triac ·With TO-247S package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light dimmers, m |
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N-Channel MOSFET ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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N-Channel MOSFET ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTI |
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Thyristors ate-trigger current VD =6V Ⅱ Ⅲ VGT Gate-trigger voltage VD =6V Rth (j-mb) Junction to mounting base Half cycle MIN MAX UNIT 0.01 1.5 mA 1.38 V 40 40 mA 40 1.3 V 0.95 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered tradem |
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Thyristor N MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ 0.01 2 mA VTM On-state voltage ITM= 40A 1.3 V IGT Gate-trigger current VD = 6V 70 mA VGT Gate-trigger voltage VD |
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N-Channel MOSFET ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.72Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.59Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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N-Channel MOSFET ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·De |
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N-Channel MOSFET ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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