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INCHANGE SF1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FESF16JT

INCHANGE
Ultrafast Rectifier

·Ultrafast recovery time
·Power pack
·Glass passivated pellet chip junction
·Low switching losses
·High efficiency
·High forward surge capability
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·For s
Datasheet
2
USF10G48

INCHANGE
Thyristor
Gate-trigger voltage VD = 6 V; RL = 10Ω Rth(j-c) Thermal resistance Junction to case MIN UNIT 400 V 400 V 10 A 16 A 160 A 0.5 W -40~125 ℃ -40~150 ℃ MIN MAX UNIT 10 μA 10 μA 1.5 V 10 mA 1 V 2.5 ℃/W Thyristors USF10G48 No
Datasheet
3
SF10LC20U

INCHANGE
Ultrafast Rectifier

·Ultrafast with soft recovery
·150℃ operating temperature
·Popular TO-220F package
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching power supply
·General purpose ABSOLUTE MAXIMUM RATINGS(Ta
Datasheet
4
SF1020CT

INCHANGE
Ultrafast Rectifier

·Ultrafast with soft recovery
·150℃ Operating temperature
·Popular TO-220 package
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching power supply
·Power switching circuits
·General purpose AB
Datasheet
5
SF1608CT

INCHANGE
Ultrafast Rectifier

·Super fast switching time for high efficiency
·Low forward voltage drop High current capability
·Low reverse leakage current
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching power supply
·P
Datasheet
6
SF16JZ51

INCHANGE
Thyristor
=100Ω VGT Gate-trigger voltage VD = 6V;RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.02 mA 1.5 V 15 mA 2.5 V 1.5 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors SF16JZ51 NOTI
Datasheet



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