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INCHANGE |
NPN Transistor ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO |
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INCHANGE |
Schottky Barrier Rectifier ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequen |
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INCHANGE |
Schottky Barrier Rectifier ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequen |
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