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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
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INCHANGE |
Thyristor trigger current VD = 6 V; IT = 0.1 A VGT Gate-trigger voltage VD = 6 V; IT = 0.1 A IH Holding current IGT= 0.1A, VD= 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 200 μA 10 mA 1.18 1.14 V 100 mA 1.5 V 200 mA 1.3 ℃/W N |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 109mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·De |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-247 packaging ·Low leakage current, low power loss, high efficiency ·High frequency operation ·High surge capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable ope |
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INCHANGE |
Thyristor PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.5 mA 1.0 VTM On-state voltage ITM= 15A 1.6 V IGT Gate-trigger current VD = 12 |
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INCHANGE |
Thyristor L PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tc=25℃ Tc=100℃ Tc=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage VD =12V;RL=60Ω; |
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INCHANGE |
Thyristor RM IDRM VTM IGT VGT PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage CONDITIONS VR=VRRM Rated; VD=VDRM Rated; Tc=25℃ Tc=100℃ Tc=125℃ VD =12V;RL=60Ω; VD =12V;RL |
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INCHANGE |
Thyristor se specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, VDM=VDRM, IDRM Repetitive peak off-state current TJ=25℃ TJ=100℃ TJ=125℃ VTM On-state voltage IGT Gate-trigger current VD =12V;RL=60Ω; VGT Gate-trigger |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 109mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.199Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applic |
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