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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED l |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.85Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET · Drain-source on-resistance: RDS(on) ≤ 0.27Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power Supply ·High Current, High Spee |
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INCHANGE |
N-Channel MOSFET · Drain-source on-resistance: RDS(on) ≤ 0.27Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power Supply ·High Current, High Spee |
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