| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
2SK2186 5A; VGS=0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 5A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capaci |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor ro Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 0; IG=100µA VDS= |
|
|
|
|
INCHANGE |
N-Channel MOSFET VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.3mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage ton T |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor OL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor R)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS Diode Forward Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfe |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor SS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1m |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor rent Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 7.0A;VGS= 0 VGS= 10V; ID= |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor nt Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 7.0A;VGS= 0 VGS= 10V; ID= 4 |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor rrent Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 5.0A;VGS= 0 VGS= 10V; ID |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor GS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time |
|
|
|
|
Inchange Semiconductor |
N-Channel Mosfet Transistor rrent Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID=1mA IS= 6A;VGS= 0 VGS= 10V; ID= 3 |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor SS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1m |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor S= 10V; ID= 2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor VGS= 10V; ID= 2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Tim |
|
|
|
|
INCHANGE |
N-Channel MOSFET S= 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time V |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor e-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 2SK2149 MIN TYPE MAX UNIT 800 V 2.0 4.0 V 2.0 Ω ±100 nA 500 µA NOTICE： ISC reserves the rights to make changes of the content herein the d |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor L PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor rain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Ca |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor = 10V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time VD |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor nt VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time VDS=25V; VGS=0V; fT=1MHz VGS=10V;ID=1.5A; RL=1 |
|