| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=330V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 43mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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