| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications FD |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power sup |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 40V ·Static drain-source on-resistance: RDS(on) ≤ 3.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static drain-source on-resistance: RDS(on) ≤ 27mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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INCHANGE |
N-Channel MOSFET S= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 10A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Di |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 59mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power sup |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 40V ·Static drain-source on-resistance: RDS(on) ≤ 8.7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 41mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power sup |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 40V ·Static drain-source on-resistance: RDS(on) ≤ 2.7mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supp |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 150V ·Static drain-source on-resistance: RDS(on) ≤ 54mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 68mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.9mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMU |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications FD |
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