| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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INCHANGE |
Schottky Barrier Rectifier ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable oper |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variati |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability ·RoHs Product. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-263 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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