INCHANGE BUZ fiche technique

No.	Partie #	Fabricant	Description
1	BUZ90	INCHANGE	N-Channel MOSFET ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABS
2	BUZ100	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high spee
3	BUZ10	INCHANGE	N-Channel MOSFET ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current
4	BUZ10A	INCHANGE	N-Channel MOSFET ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·150℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor cont
5	BUZ12	INCHANGE	N-Channel MOSFET Transistor ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for app
6	BUZ45	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switch
7	BUZ172	INCHANGE	P-Channel MOSFET ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Po
8	BUZ11S2	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appl
9	BUZ12A	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for app
10	BUZ21	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appli
11	BUZ11	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appl
12	BUZ211	Inchange Semiconductor	N-Channel MOSFET Transistor ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appli
13	BUZ305	Inchange Semiconductor	N-Channel MOSFET Transistor ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABS
14	BUZ205	INCHANGE	N-Channel MOSFET ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters r .
15	BUZ11A	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·D
16	BUZ20	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appli
17	BUZ23	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switch
18	BUZ30A	INCHANGE	N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high
19	BUZ101	Inchange Semiconductor	N-Channel MOSFET Transistor ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D
20	BUZ206	Inchange Semiconductor	N-Channel MOSFET Transistor ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters r .