No. | Partie # | Fabricant | Description | Fiche Technique |
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Thyristors wise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IH Holding current IL Latching current VRRM= |
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Thyristors = 12V; IT=0.1A VGT Gate-trigger voltage VD = 12V; IT=0.1A Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.5 mA 1.6 V 0.2 mA 1.5 V 5.0 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BT2 |
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INCHANGE |
PNP Transistor uration Voltage isc website:www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT IC= -10mA ; IB= 0 -60 V VCE= -50V; IE= 0 -0.1 μA VCE= -30V; VBE=-0.5V -0.05 μA IC=-0.1mA ; VCE= -10V IC=1mA ; VCE= -10V IC=-10mA ; VCE= -10V IC=-150mA ; VCE= -10V IC=-5 |
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