No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
Thyristor (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω,RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω,RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 4.3 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-16LB N |
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INCHANGE |
Thyristor t VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=3 |
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INCHANGE |
Thyristor th (j-c) Gate-trigger voltage Junction to case IT=20A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2000 μA 1.5 V 30 30 mA 30 1.5 V 4.0 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristo |
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INCHANGE |
Thyristor ted; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG= |
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INCHANGE |
Thyristor Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half |
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INCHANGE |
Thyristor k reverse current VR=VRRM Rated; VD=VDRM Rated; IDRM Repetitive peak off-state current Tj=25℃; Tj=150℃ 50 2000 μA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω |
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INCHANGE |
Thyristor ger voltage Junction to case IT=25A Ⅰ VD =12V;RG=330Ω; Ⅱ RL=6Ω Ⅲ VD =12V;RG=330Ω;RL=6Ω Half cycle MAX 2.0 1.75 50 50 50 1.5 1.8 UNIT mA V mA V ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR12PM- |
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Inchange Semiconductor |
Triacs · IT (RMS) : 16 A · VDRM : 600 V · IFGTI, IRGTI, IRGTIII : 30mA ·Insulated Type ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control, heater control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL |
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INCHANGE |
Triacs ·With TO-220F insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Thyristor petitive peak off-state current VD=VDRM Rated; Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω 1.6 V 3 |
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INCHANGE |
Thyristor epetitive peak off-state current VD=VDRM Rated; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2.0 mA 1 |
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INCHANGE |
Thyristor ent VR=VRRM Rated; VD=VDRM Rated; IDRM Repetitive peak off-state current Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω 1 |
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INCHANGE |
Thyristor h (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.5 V 30 30 mA 30 1.5 V 3.5 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR16PM-14LG NOTI |
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INCHANGE |
Triacs ·With TO-220F insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Thyristor ·With TO-220F package ·Glass passivated triacs in a plastic envelope, for use in Applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.Typical applications include motor control, indu |
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INCHANGE |
Thyristor j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 4.3 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-16LB NOTICE: |
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INCHANGE |
Thyristor (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 3.6 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-14LB NOTICE: |
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INCHANGE |
Thyristor off-state current Tj=125℃ MIN MAX UNIT 2 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage ITM=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ 1.5 V 30 30 mA 30 1.5 1.5 V 1.5 NOTICE: ISC reserves the right |
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INCHANGE |
Thyristor Rated; IDRM Repetitive peak off-state current Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle |
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INCHANGE |
Thyristor nt VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG= |
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