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INCHANGE BCR DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BCR8FM-16LB

INCHANGE
Thyristor
(j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω,RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω,RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 4.3 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-16LB N
Datasheet
2
BCR5PM-14LJ

INCHANGE
Thyristor
t VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=3
Datasheet
3
BCR12PM-12LG

INCHANGE
Thyristor
th (j-c) Gate-trigger voltage Junction to case IT=20A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2000 μA 1.5 V 30 30 mA 30 1.5 V 4.0 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristo
Datasheet
4
BCR16PM-12LG

INCHANGE
Thyristor
ted; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=
Datasheet
5
BCR3LM-12RB

INCHANGE
Thyristor
Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half
Datasheet
6
BCR16PM-12LA

INCHANGE
Thyristor
k reverse current VR=VRRM Rated; VD=VDRM Rated; IDRM Repetitive peak off-state current Tj=25℃; Tj=150℃ 50 2000 μA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω
Datasheet
7
BCR16CM-12LC

INCHANGE
Thyristor
ger voltage Junction to case IT=25A Ⅰ VD =12V;RG=330Ω; Ⅱ RL=6Ω Ⅲ VD =12V;RG=330Ω;RL=6Ω Half cycle MAX 2.0 1.75 50 50 50 1.5 1.8 UNIT mA V mA V ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR12PM-
Datasheet
8
BCR16LM-12LB

Inchange Semiconductor
Triacs

· IT (RMS) : 16 A
· VDRM : 600 V
· IFGTI, IRGTI, IRGTIII : 30mA
·Insulated Type
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Motor control, heater control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL
Datasheet
9
BCR10PM

INCHANGE
Triacs

·With TO-220F insulated package
·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light
Datasheet
10
BCR8PM-14L

INCHANGE
Thyristor
petitive peak off-state current VD=VDRM Rated; Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω 1.6 V 3
Datasheet
11
BCR3PM-12LG

INCHANGE
Thyristor
epetitive peak off-state current VD=VDRM Rated; Tj=150℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2.0 mA 1
Datasheet
12
BCR16FM-14LJ

INCHANGE
Thyristor
ent VR=VRRM Rated; VD=VDRM Rated; IDRM Repetitive peak off-state current Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω 1
Datasheet
13
BCR16PM-14LG

INCHANGE
Thyristor
h (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.5 V 30 30 mA 30 1.5 V 3.5 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR16PM-14LG NOTI
Datasheet
14
BCR16PM

INCHANGE
Triacs

·With TO-220F insulated package
·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light
Datasheet
15
BCR8PM14L

INCHANGE
Thyristor

·With TO-220F package
·Glass passivated triacs in a plastic envelope, for use in Applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.Typical applications include motor control, indu
Datasheet
16
BCR8LM-14LB

INCHANGE
Thyristor
j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 4.3 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-16LB NOTICE:
Datasheet
17
BCR8FM-14LB

INCHANGE
Thyristor
(j-c) Gate-trigger voltage Junction to case IT=12A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle 1.6 V 30 30 mA 30 1.5 V 3.6 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR8FM-14LB NOTICE:
Datasheet
18
BCR3AM-8

INCHANGE
Thyristor
off-state current Tj=125℃ MIN MAX UNIT 2 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage ITM=4.5A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ 1.5 V 30 30 mA 30 1.5 1.5 V 1.5 NOTICE: ISC reserves the right
Datasheet
19
BCR5LM-12RB

INCHANGE
Thyristor
Rated; IDRM Repetitive peak off-state current Tj=150℃ MIN MAX UNIT 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage Rth (j-c) Junction to case IT=7A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle
Datasheet
20
BCR16FM-12LB

INCHANGE
Thyristor
nt VR=VRRM Rated; IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=150℃ 2.0 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=25A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=
Datasheet



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