| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
PNP Transistor llector Cutoff Current VCB=-20 V; IE= 0 IEBO Emitter Cutoff Current VEB=-5V; IC= 0 Hfe1* DC Current Gain IC= -100mA; VCE= -1V hFE2* DC Current Gain IC=- 500mA; VCE= -1V fT Current Gain-Bandwidth Product IC= -10mA; VCE= -5V, f= 100MHz *: |
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INCHANGE |
NPN Transistor IC= 10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA; IB= 5mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 |
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