| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switc |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID=54A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor AOI296A ·APPLICATIONS ·Power supply ·DC-DC converters |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·De |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.7mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.86Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With To-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
|
|
|
|
INCHANGE |
P-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor AOI409 ·APPLICATIONS ·Power supply ·DC-DC converters · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·B |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|