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INCHANGE |
Schottky Barrier Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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INCHANGE |
PNP Transistor AX Rth j-c Thermal Resistance,Junction to Case 3.12 Rth j-a Thermal Resistance,Junction to Ambient 70 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT32/A/B/C ELECTRICAL |
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INCHANGE |
PNP Transistor Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 8.12 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & is |
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Inchange Semiconductor |
Silicon PNP Power Transistor nction to Ambient 80 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI |
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INCHANGE |
NPN Transistor unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat)* VBE(on)* ICEO Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC=-3A; IB= - |
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INCHANGE |
PNP Transistor mA; IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage VBE(on)* Base-Emitter On Voltage ICBO Collector Cutoff Current IC=- 3A; IB= -375mA IC= -3A; VCE=-4V VCB=- 100V; IE= 0 IEBO Emitter Cutoff Current VEB=- 5V; IC= 0 hFE1* hFE2* DC Cur |
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INCHANGE |
PNP Transistor IP32C isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat) |
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