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Thyristors M= 16A IGT Gate-trigger current VD = 6 V VGT Gate-trigger voltage VD = 6 V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.5 mA 10 mA 0.5 mA 10 mA 1.25 V 45 mA 2 V 1.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is regis |
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Thyristor load Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.5 mA 10 mA 0.5 mA 10 mA 1.25 V 45 mA 2.0 V 1.1 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors 25TTS08 NOTICE： ISC reserves the rights to |
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Thyristors STICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ 0.5 mA 10 mA 0.5 mA 10 mA VTM On-st |
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N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters · |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters · |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 39mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta= |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters · |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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