| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Maxi IPM Package • Fully isolated Dual In-Line molded module • Very low thermal resistance due to DCB substrate • Lead-free terminal plating; RoHS compliant Inverter • 1200 V TRENCHSTOPTM IGBT7 S7 • Rugged 1200 V SOI gate driver technology with stability agai |
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Dynex Semiconductor |
IGBT Power Module I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0V 100A 200A APPLICATIONS I I I Motor Drives Wind Turbines UPS Sys |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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ETC |
1 Watt Ultra-Miniatur SIL-Modul-Serie Ultra mini SIL4 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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ETC |
1 Watt Ultra-Miniatur SIL-Modul-Serie Ultra mini SIL4 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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Toshiba |
Microwave Power GAAS Fet |
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Toshiba |
Microwave Power GaAs FET |
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Toshiba |
Microwave Power GaAs FET ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICR |
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Toshiba |
Microwave Power GaAs FET |
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Dynex Semiconductor |
Half-Bridge IGBT • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated AlSiC Base with AlN Substrates • Lead Free Construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.8V 100A 200A * |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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HN Electronic Components GmbH |
1 Watt Ultra-Miniatur DIL-Modul-Serie Ultra mini DIL8 package Isolation voltage max. 1000 V short-time short circuit protection Technische Daten (bei 25°C Umgebungstemperatur) Specification (at 25°C ambient temperature) Eingangsdaten Eingangsspannung Eingangsfilter Input Specificatio |
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Sunbond |
TFT LCD ----------------------4 4 4 5 6 LB04302 LCD Module - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - ------------------- MECHANICAL SPECIFICATIONS OUTLINE DIMENSIONS BLOCK DIAGRAM ----------------------------------------- |
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HannStar |
TFT LCD ■ 5.0 (15:9 diagonal) inch configuration ■ 6 bits + FRC driver with 1 channel TTL interface ■ RoHS and Halogen-Free Compliance 1.3 Applications ■ Personal Navigation Device ■ Multimedia applications and Others AV system 1.4 General information Item O |
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DYNEX |
Single Switch IGBT Module • 10µs Short Circuit Withstand • High Thermal Cycling Capability • High Current Density Enhanced DMOS • Isolated AlSiC Base With AlN Substrates • Low Switching Loss Device DMOS+ DIM1500ESM33-RR500 Gen4 DMOS Single Switch IGBT Module DS6446-1 July |
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Infineon |
Maxi IPM Package • Fully isolated Dual In-Line molded module • Very low thermal resistance due to DCB substrate • Lead-free terminal plating; RoHS compliant Inverter • 1200 V TRENCHSTOPTM IGBT7 S7 • Rugged 1200 V SOI gate driver technology with stability agai |
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TE |
Signal Relays |
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