| No. | Partie # | Fabricant | Description | Fiche Technique |
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Huajing Discrete Devices |
Silicon N-Channel Power MOSFET l Fast Switching 500 20 230 0.25 l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron bal |
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