| No. | Partie # | Fabricant | Description | Fiche Technique |
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Huajin Discrete Devices |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T |
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