Hitachi Semiconductor HN2 fiche technique

No.	Partie #	Fabricant	Description
1	HN27C256HG	Hitachi Semiconductor	32768-word x 8-bit CMOS UV Erasable and Programmable ROM • High speed: Access time
2	HN27C4096	Hitachi Semiconductor	4M UV and OTP EPROM
3	HN27C256A	Hitachi Semiconductor	256K UV and OTP EPROM
4	HN27C256G	Hitachi Semiconductor	256K UV and OTP EPROM
5	HN27C64G	Hitachi Semiconductor	8192-word x 8-bit UV Erasable and Programmable CMOS ROM
6	HN27C256AG	Hitachi Semiconductor	32768-word x 8-bit UV Erasable and Programmable ROM • High speed Access time: 100/120/150 ns (max) • Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 µW (typ) • High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm a
7	HN29V51211	Hitachi Semiconductor	512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) • On-board single power supply (VCC): VCC = 2.7 V to 3.6 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming
8	HN29W12811	Hitachi Semiconductor	128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming 
9	HN29W25611	Hitachi Semiconductor	256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming 
10	HN27C4000G	Hitachi Semiconductor	524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM • Organization: 524288-word × 8-bit/262144word × 16-bit (BYTE /VPP enables selection byte-wide or word-wide) • High speed: Access time 100 ns/120 ns/150 ns (max) Burst access time 50 ns/60 ns/60 ns (max) • Low power dissipation: Standby mode; 5 µW (t
11	HN27C4096H	Hitachi Semiconductor	4M UV EPROM
12	HN27C4096HG	Hitachi Semiconductor	262144-word x 16-Bit CMOS UV EPROM
13	HN27C4096HCC	Hitachi Semiconductor	262144-word x 16-Bit CMOS UV EPROM
14	HN27C4096A	Hitachi Semiconductor	4M UV and OTP EPROM
15	HN27C4096AH	Hitachi Semiconductor	4M UV and OTP EPROM
16	HN27C256H	Hitachi Semiconductor	256K UV and OTP EPROM
17	HN27C256FP	Hitachi Semiconductor	256K UV and OTP EPROM
18	HN27C64FP	Hitachi Semiconductor	8192-WORD X 8BIR ONE TIME ELECTRICALLY PROGRAMMABLE CMOS ROM
19	HN29WB800	Hitachi Semiconductor	(HN29WB800 / HN29WT800) CMOS Flash Memory • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Access time: 80/100/120 ns (max) • Low power dissipation:  ICC = 30 mA (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 mA (max) (Program)  ICC = 40 mA (max) (Erase)  ICC = 1 µA (ty
20	HN29WT800	Hitachi Semiconductor	(HN29WB800 / HN29WT800) CMOS Flash Memory • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Access time: 80/100/120 ns (max) • Low power dissipation:  ICC = 30 mA (max) (Read)  ICC = 200 µA (max) (Standby)  ICC = 40 mA (max) (Program)  ICC = 40 mA (max) (Erase)  ICC = 1 µA (ty