| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
GaAs MMIC Low Noise Amplifier for Micro Wave Application • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built –in matching circuits (50Ω) Small |
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Hitachi Semiconductor |
GaAs MMIC Low Noise Amplifier • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.3 dB typ. @1.5Ghz) High power gain (16 dB typ. @1.5GHz) Built –in matching circuits (50Ω) Small sur |
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Hitachi Semiconductor |
GaAs IC Low Distortion Mixer for Micro Wave Application • • • • Suitable for low distortion of Micro Wave Application Low voltage and low current operation (3V, 7mA typ.) Low insertion loss (1.0 dB typ. @800MHz) Small surface mount package (MPAK –6) Outline MPAK—6 This Device si sensitive to Electro Stat |
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Hitachi Semiconductor |
GaAs MMIC Down Converter for Micro Wave Application • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz) Low 3rd-order intercept point (IP3in=-0.5dBm typ, @1489MHz) Small surface mou |
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Hitachi Semiconductor |
GaAs MMIC Down Converter for Micro Wave Application • • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (3V, 9 mA typ.) Low noise (2 dB typ. @1.5 Ghz) High power gain (26 dB typ. @1.5 GHz) Built –in matching circuits (50 Ω ) Small surface mou |
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Hitachi Semiconductor |
Low Noise Amplifier • • • • • • Suitable for low noise amplifier of PHS (1.9 GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.9 dB typ.) High power gain (13.5 dB typ.) Built –in input and output matching circuits (50Ω) Small surface mount package (M |
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