| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = |
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Hitachi Semiconductor |
2SA1029 — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I |
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Hitachi Semiconductor |
Silicon PNP Transistor 800 –0.2 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V |
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Hitachi Semiconductor |
Silicon PNP Transistor — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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Hitachi Semiconductor |
2SA1030 p — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, |
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Hitachi Semiconductor |
2SA1032 .5 –0.5 500 –0.8 –0.2 — 4.0 5 Min –55 –50 –5 — — 100 — — 200 — — Typ — — — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor Base to emitter voltage Note: Grade Mark hFE B MB 100 to 200 C MC 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — D MD VCE(sat) VBE V V I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA 1. The 2SA1052 is grouped by hFE as follows. 250 to 500 See c |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 800 –0.2 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 800 –0.2 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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Hitachi Semiconductor |
Low ESR Tantalum Chip Capacitors an Year 2000 2001 2002 2003 n A N a p B P b q C Q c r D R d s E S e 1 177 HITACHI AIC / BOSTON AIC • 69 Milk Street • Westborough, MA 01581 • Phone: 508-366-4092 • Fax: 508-366-9164 Feb Mar Apr May Jun t F T f Jul u G U g Aug v H V h Sep w J |
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