| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three |
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Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) • Single 5.0 Vsupply : 5.0 V ± 10 % • Access time: 10 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 170 mA (max) • TTL s |
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Hitachi Semiconductor |
32/768-word x 8-bit High Speed CMOS Static RAM • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 5 µW (typ) (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static memory No clock or timing strobe required • Equal access and cycle time |
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Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
HM65256BLFP-12T |
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Hitachi |
8-bit CMOS Static RAM |
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Hitachi Semiconductor |
16384-word x 4-bit High Speed CMOS Static RAM • Single 5 V supply arid high density plastic package • High speed: fast access time 25/35 ns (max) • Low power dissipation: Active mode 300 mW (typ) Standby mode 100 µW (typ) • Completely static memory No clock or timing strobe required • Equal acce |
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Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
64k SRAM (8-kword x 8-bit) Wide Temperature Range version • Single 5 V supply: 5 V ± 10% • Access time: 100/120 ns (max) • Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Common da |
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Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) • Single supply : 3.3 V ± 0.3 V • Access time 12/15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current : 150/130 mA (max) • TT |
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Hitachi |
1M High Speed SRAM |
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Hitachi |
131072 word x 9 Bit High Speed CMOS Static RAM |
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Hitachi |
4096 x 1-Bit High Speed CMOS SRAM |
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Hitachi |
16384 x 1-Bit High Speed CMOS SRAM |
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Hitachi |
32768 word x 8-Bit High Speed CMOS Static RAM |
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Hitachi |
32768 word x 8-Bit High Speed CMOS Static RAM |
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