Hi-Sincerity HMJ fiche technique

No.	Partie #	Fabricant	Description
1	HMJE13003	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR ................................................................................. 400 V VEBO Emitter to Base Voltage .............................................................................................. 9 V IC Collector Current .............
2	HMJE13003T	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50
3	HMJE13005	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR
4	HMJE13007	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR
5	HMJE3055T	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR
6	HMJE13001	Hi-Sincerity	NPN Triple Diffused Planar Type High Voltage Transistor • High breakdown voltage • Low collector saturation voltage • Fast switching speed TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ...........................................................................................
7	E2955T	Hi-Sincerity Mocroelectronics	HMJE2955T
8	HMJE13007A	Hi-Sincerity	NPN EPITAXIAL PLANAR TRANSISTOR Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak
9	HMJE13003D	Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR .................................................................................... 400 V VEBO Emitter to Base Voltage .............................................................................................. 9 V IC Collector Current ..........
10	HMJE2955T	Hi-Sincerity Mocroelectronics	PNP EPITAXIAL PLANAR TRANSISTOR