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Guangdong Kexin Industrial |
Power Transistor Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current |
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Guangdong Kexin |
Silicon PNP Transistor Low collector-emitter saturation voltage VCE(sat). High-speed switching. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0. |
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Guangdong Kexin |
PNP Epitaxial Planar Silicon Transistors Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Conne |
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Guangdong Kexin |
PNP Epitaxial Planar Silicon Transistors Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Conne |
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Guangdong Kexin |
PNP Epitaxial Planar Silicon Transistors Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection |
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Guangdong Kexin Industrial |
PNP Silicon Epitaxial Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current ( |
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Guangdong Kexin Industrial |
Silicon PNP Transistor Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage |
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Guangdong Kexin Industrial |
Silicon PNP Triple Diffused Type Transistor Low collector saturation voltage. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0 |
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Guangdong Kexin Industrial |
Transistors Low collector-to-emitter saturation voltage. High current and high fT. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Fast switching time. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 |
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