| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
NPN General Purpose Amplifier al Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPS8050 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Paramete |
|
|
|
|
National Semiconductor |
NPN General Purpose Amplifier rmal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW/°C °C/W °C/W MPS8050 Electrical Characteristics Symbol Parameter NPN General Purpose Amplifier (continued) |
|
|
|
|
Samsung semiconductor |
NPN (GENERAL PURPOSE TRANSISTOR) |
|
|
|
|
General Semiconductor |
Small Signal Transistors ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor MPSA06 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This t |
|
|
|
|
General Semiconductor |
Small Signal Transistors ♦ NPN Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets and in video output stages of TV receivers and monitors. ♦ As complementary types, the PNP transistors MPSA92 and MPSA93 are recommended max. ∅ .022 (0 |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier therwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA56 625 5.0 83.3 200 Max *MMBTA56 350 2.8 357 **PZTA56 1,000 8.0 125 Units mW mW/ °C ° C/W ° |
|
|
|
|
Samsung semiconductor |
NPN (GENERAL PURPOSE TRANSISTOR) |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier tic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS3703 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPS3703 PNP General Pur |
|
|
|
|
ON Semiconductor |
General Purpose Transistors mo Pack Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 October, 2001 – Rev. 0 Publication Order Number: MPS2907A/D www.DataSheet4U.com MPS2907A ELECTRICAL CHA |
|
|
|
|
General Semiconductor |
Small Signal Transistors ♦ PNP Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets and in video output stages of TV receivers and monitors. ♦ As complementary types, the PNP transistors MPSA42 and MPSA43 are recommended. max. ∅ .022 |
|
|
|
|
Fairchild Semiconductor |
PNP Small Signal General Purpose Amplifiers & Switches |
|
|
|
|
Fairchild Semiconductor |
NPN Small Signal General Purpose Amplifier |
|
|
|
|
General Semiconductor |
SMALL SIGNAL TRANSISTORS ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type design |
|
|
|
|
Fairchild Semiconductor |
NPN General Purpose Amplifier • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Vol |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA55 625 5.0 83.3 200 Max *MMBTA55 350 2.8 357 **PZTA55 1,000 8.0 125 Units mW mW/°C °C/W °C/W *D |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier e above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6518 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPS6518 PNP General Purpose Amplifier (continued) Electr |
|
|
|
|
Fairchild Semiconductor |
NPN General Purpose Amplifier er Test Condition IC = 0.5mA, IB = 0 IC =10µA, IE = 0 IC = 10µA, IC = 0 VCE = 30V, IE = 0 VCB = 30V, IE = 0, T = 60°C IC = 2.0mA, VCE = 10V IC = 100mA, VCE = 10V IC = 50mA, IB = 5.0mA VCB = 10V, IE = 0, f = 100kHz 250 150 Min. 25 40 4.0 50 1.0 500 0. |
|
|
|
|
Fairchild Semiconductor |
NPN General Purpose Amplifier 0 VCE = 30V, IE = 0 VCB = 30V, IE = 0, T = 100°C IC = 2.0mA, VCE = 10V IC = 100mA, VCE = 10V IC = 50mA, IB = 5.0mA VCB = 10V, IE = 0, f = 100kHz 150 90 Min. 25 40 4.0 50 1.0 300 0.5 3.5 V pF Max. Units V V V nA µA Off Characteristics Collector-Emitte |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier tic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6534 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPS6534 PNP General Pur |
|
|
|
|
Fairchild Semiconductor |
PNP General Purpose Amplifier c Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6523 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPS6523 PNP General Purpo |
|