| No. | Partie # | Fabricant | Description | Fiche Technique |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature low turn-on volt∅ .063 (1.6) .055 (1.4) Cathode Mark age and high break-down voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostati |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching diode in MiniMELF case especially suited for automatic insertion. ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ This diode is also available in other case styles .142 (3.6) .134 (3.4) .019 (0.48) .011 ( |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in MiniMELF case ∅ .063 (1.6) .055 (1.4) especially suited for automatic insertion. styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature low turn-on volt∅ .063 (1.6) .055 (1.4) Cathode Mark age and high break-down voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostati |
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Fairchild Semiconductor |
High Voltage General PurPose Diodes |
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ON Semiconductor |
High Voltage General Purpose Diode • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Notes 1 and 2) Symbol Parameter Value Unit WIV Working Inverse Voltage 150 V IO Average Rectified Forward Current 200 |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ This diode features low turn-on ∅ .063 (1.6) .055 (1.4) Cathode Mark voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose and switching ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ This diode is also available in other case styles including the DO-35 case with the type designation 1N4150 and the SOD-123 case with the t |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in MiniMELF ∅ .063 (1.6) .055 (1.4) Cathode Mark case especially suited for automatic insertion. including the DO-35 case with the type designation 1N4151 and the SOD-123 case with the type de |
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Fairchild Semiconductor |
High Voltage General PurPose Diodes |
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