logo

General Semiconductor BAV DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BAV19

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case
Datasheet
2
BAV102

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type
Datasheet
3
BAV103

Fairchild Semiconductor
High Voltage / General Purpose Diode
nt DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 200 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200
Datasheet
4
BAV21WS

General Semiconductor
SMALL SIGNAL DIODES
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SO
Datasheet
5
BAV19

Fairchild Semiconductor
General Purpose Diodes
pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont
Datasheet
6
BAV19WS

General Semiconductor
SMALL SIGNAL DIODES
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SO
Datasheet
7
BAV21

Fairchild Semiconductor
General Purpose Diodes
pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont
Datasheet
8
BAV21

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case
Datasheet
9
BAV100

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type
Datasheet
10
BAV101

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type
Datasheet
11
BAV102

Fairchild Semiconductor
High Voltage / General Purpose Diode
nt DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 150 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200
Datasheet
12
BAV20

Fairchild Semiconductor
General Purpose Diodes
pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont
Datasheet
13
BAV20

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case
Datasheet
14
BAV20W

General Semiconductor
Small Signal Diodes

·
·
·
·
·
·
·
·
· Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Case: SOD-123, Molded Plastic Case Material: UL Flammability Rating Classification 94V-0 Moisture Sensitivi
Datasheet
15
BAV23

Philips Semiconductors
General purpose double diode

• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA. APPLICATIONS
• General purpose wher
Datasheet
16
BAV23S

Philips Semiconductors
General purpose double diode

• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA. APPLICATIONS
• General purpose wher
Datasheet
17
BAV103

General Semiconductor
Small Signal Diodes
♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type
Datasheet
18
BAV17

Fairchild Semiconductor
General Purpose Diodes
Datasheet
19
BAV18

Fairchild Semiconductor
General Purpose Diodes
Datasheet
20
BAV19W

General Semiconductor
Small Signal Diodes
SOD-123 .022 (0.55) ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV1
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact