| No. | Partie # | Fabricant | Description | Fiche Technique |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches .012 (0.3) ♦ For electronic bandswitching in radio and .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV tun |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and TV tuners in the frequency range of 50 … 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches .012 (0.3) ♦ For electronic bandswitching in radio and .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV tun |
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General Semiconductor |
Bandswitching Diodes ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and TV tuners in the frequency range of 50 … 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The |
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