| No. | Partie # | Fabricant | Description | Fiche Technique |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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General Semiconductor |
ZENER DIODES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) ♦ These diodes are also availabl |
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Knox Semiconductor Inc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES Dissipation Min Reverse Breakdown Voltage Max Reverse Current (IR) Max Reverse Current (IR2) Temp. Coefficient of Capacitance Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance @ Ta = 25°C @ IR = 10 µA @ 25 Vdc @ 25 Vdc 15 |
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General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER P A T E N T Case Style G4 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Capable of meeting environ |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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General Semiconductor |
ZENER DIODES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) ♦ These diodes are also availabl |
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General Semiconductor |
GENERAL PURPOSE PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ 1.5 Ampere operation at TL=70°C with no thermal runaway ♦ Low reverse leakage ♦ Construction utilizes void-free molded plastic technique |
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Knox Semiconductor Inc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES Dissipation Min Reverse Breakdown Voltage Max Reverse Current (IR) Max Reverse Current (IR2) Temp. Coefficient of Capacitance Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance @ Ta = 25°C @ IR = 10 µA @ 25 Vdc @ 25 Vdc 15 |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Fast switchin |
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General Semiconductor |
ZENER DIODES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) ♦ These diodes are also availabl |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES 40 40 40 60 60 60 60 60 60 60 60 60 60 60 60 60 60 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 65 65 65 65 65 65 65 65 65 65 65 65 65 65 Package Style DC Power Dissipation Max Reverse Current (IR) Max Reverse Current (IR2) Operating Temperature (T |
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General Semiconductor |
GENERAL PURPOSE PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ 1.5 Ampere operation at TL=70°C with no thermal runaway ♦ Low reverse leakage ♦ Construction utilizes void-free molded plastic technique |
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Knox Semiconductor Inc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES Dissipation Min Reverse Breakdown Voltage Max Reverse Current (IR) Max Reverse Current (IR2) Temp. Coefficient of Capacitance Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance @ Ta = 25°C @ IR = 10 µA @ 25 Vdc @ 25 Vdc 15 |
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General Semiconductor |
GLASS PASSIVATED FAST SWITCHING RECTIFIER 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction ♦ 1.0 Ampere operation at TA=55 |
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General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ 1.0 Ampere op |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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Knox SemiconductorInc |
GENERAL PURPOSE ABRUPT VARACTOR DIODES tance Operating Temperature Range (Topr) Storage Temperature Range (Tstg) Voltage Tolerance: @ Ir = 10 µAdc @ Vr = 55 Vdc @ Vr = 55 Vdc; Ta = 150°C @ Vr=4 Vdc; Ta -40 to +85°C Standard Device Suffix A DO-7 400 mW 250 mA 65 Vdc 20 nAdc 20 µAdc .03% |
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General Semiconductor |
ZENER DIODES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) ♦ These diodes are also availabl |
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