| No. | Partie # | Fabricant | Description | Fiche Technique |
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GTM |
NPN EPITAXIAL TRANSISTOR 0 IE=100uA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=500mA VCE=1V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions Classification Of hFE1 Rank hFE1 G 112 - 166 H 144 - 202 L 176 |
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GTM |
NPN EPITAXIAL TRANSISTOR B=50V, IE=0 VEB=5V, IC=0 IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 Test Conditions Classification Of hFE Rank hFE B 100 - 300 C 200-600 D 400-1000 1/3 ISSUED DATE :2004/11/10 REVISED DATE |
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GTM |
PNP EPITAXIAL TRANSISTOR E=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz Test Conditions *Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification O |
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GTM |
NPN epitaxial planar transistor 54 - 80 Unit V V V nA V MHz pF Test Conditions IC=100uA , IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=12V, IE=0 IC=10mA, IB=1mA VCE=5V, IC=1mA VCE=5V, IC=5mA VCB=10V, IE=0 * Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2% G 72 - 108 H 97 - 146 I 132 - 19 |
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GTM |
PNP EPITAXIAL TRANSISTOR 0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA VCE=-1V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions Classification Of hFE1 Rank hFE1 |
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