GME SS1 fiche technique

No.	Partie #	Fabricant	Description
1	SS110	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
2	1SS196	GME	Surface mount switching diode  Low forward voltage VF(3)=0.9V(typ). Pb Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:trr=1.6ns(typ). 1SS196 APPLICATIONS  High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking
3	SS1150FA	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Metal-Semiconductor junction with guard ring z Epitaxial construction z Low forward voltage drop, low switching losses z High surge capacity z For use in low voltage, high frequency inverters free Pb Lead-free wheeling, and polarity protection ap
4	SS12	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
5	SS13	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
6	SS16	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
7	SS15	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
8	SS19	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
9	SS19FA	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Schottky barrier rectifier Pb z Guarding protection Lead-free z Low forward voltage z Reverse energy tested z High current capability z Extremely low thermal resistance MECHANICAL DATA z Case: SMAFL molded plastic body z Polarity: Color ba
10	SS19F	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  RoHS Compliant Mechanical Data  Case: SMAF molded plastic 
11	SS1200FA	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Metal-Semiconductor junction with guard ring z Epitaxial construction z Low forward voltage drop, low switching losses z High surge capacity z For use in low voltage, high frequency inverters free Pb Lead-free wheeling, and polarity protection ap
12	SS1150	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Metal-Semiconductor junction with guard ring z Epitaxial construction z Low forward voltage drop, low switching losses z High surge capacity z For use in low voltage, high frequency inverters free Pb Lead-free wheeling, and polarity protection ap
13	SS14	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
14	SS18	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  Guarding for over voltage protection  RoHS Compliant Mechan
15	SS18FA	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Schottky barrier rectifier Pb z Guarding protection Lead-free z Low forward voltage z Reverse energy tested z High current capability z Extremely low thermal resistance MECHANICAL DATA z Case: SMAFL molded plastic body z Polarity: Color ba
16	SS15FA	GME	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS z Schottky barrier rectifier Pb z Guarding protection Lead-free z Low forward voltage z Reverse energy tested z High current capability z Extremely low thermal resistance MECHANICAL DATA z Case: SMAFL molded plastic body z Polarity: Color ba
17	1SS184	GME	Surface mount switching diode  Low forward voltage VF=0.9V(typ). Pb Lead-free  Small total capacitance.  Fast reverse recovery time:trr=1.6ns(typ). 1SS184 APPLICATIONS  High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS184 B3 Packa
18	1SS190	GME	Surface mount switching diode  Low forward voltage VF=0.92V(typ).  Small total capacitance:CT=2.2pF(typ).  Fast reverse recovery time:trr=1.6ns(typ) Pb Lead-free 1SS190 APPLICATIONS  High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS190
19	1SS193	GME	Surface mount switching diode  Low forward voltage Pb VF(3)=0.9V(typ). Lead-free  Small total capacitance:CT=0.9pF(typ).  Fast reverse recovery time:trr=1.6ns(typ). 1SS193 APPLICATIONS  High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking
20	SS1200F	GME	Schottky Barrier Rectifiers  Metal silicon junction, majority carrier conduction  High surge capability  High temperature soldering guaranteed: 260°C/10 seconds  High current capability, low forward voltage drop  RoHS Compliant Mechanical Data  Case: SMAF molded plastic 